PR43MID-IRPHOTORESISTORMaterial:PbSeTECHNICALSPECIFICATIONS(Ta=20 C)Wavelengthrange(50%)1.00-4.40 mMaximumresponsivity( 90%)2.00 3.8 mZerobiasresistance(10mV)0.15-0.35MOhmD*(573K,1200Hz,143Hz)(5-10)108W-1cmHz1/2Voltage/Wattsensitivity200-500V/WRiseandfalltimesofphotocurrentpulse5msPhotosensitivearea2.0x1.8mm ckageTO-5Material:PbSeTECHNICALSPECIFICATIONS(Ta=20 C)Wavelengthrange(50%)1.00-4.40 mMaximumresponsivity( 90%)2.00 3.8 mZerobiasresistance(10mV)0.15-0.35MOhmD*(573K,1200Hz,143Hz)(5-10)108W-1cmHz1/2Voltage/Wattsensitivity200-500V/WRiseandfalltimesofphotocurrentpulse5msPhotosensitivearea2.0x1.8mm ckageTO-5Material:PbSeTECHNICALSPECIFICATIONS(Ta=20 C)Wavelengthrange(50%)1.00-4.40 mMaximumresponsivity( 90%)2.00 3.8 mZerobiasresistance(10mV)0.15-0.35MOhmD*(573K,1200Hz,143Hz)(5-10)108W-1cmHz1/2Voltage/Wattsensitivity200-500V/WRiseandfalltimesofphotocurrentpulse5msPhotosensitivearea2.0x1.8mm ckageTO-5Material:PbSeTECHNICALSPECIFICATIONS(Ta=20 C)Wavelengthrange(50%)1.00-4.40 mMaximumresponsivity( 90%)2.00 3.8 mZerobiasresistance(10mV)0.15-0.35MOhmD*(573K,1200Hz,143Hz)(5-10)108W-1cmHz1/2Voltage/Wattsensitivity200-500V/WRiseandfalltimesofphotocurrentpulse5msPhotosensitivearea2.0x1.8mm ckageTO-5Material:PbSeTECHNICALSPECIFICATIONS(Ta=20 C)Wavelengthrange(50%)1.00-4.40 mMaximumresponsivity( 90%)2.00 3.8 mZerobiasresistance(10mV)0.15-0.35MOhmD*(573K,1200Hz,143Hz)(5-10)108W-1cmHz1/2Voltage/Wattsensitivity200-500V/WRiseandfalltimesofphotocurrentpulse5msPhotosensitivearea2.0x1.8mm ckageTO-5