MulticrystallineSiliconWaferSpecificationsCrystallinityMulti-CrystallineConductivitytype：P-type(borondoped)Geometry：SquareLifetime： 2 soningotResisitivity：0.5~3.0?-cm163CarbonContent： 5x10atoms/cm173OxygenContent： 8x10atoms/cmWaferSize：156mmx156mm 0.5mmCenterThickness：200 m 30 mChips： 2ea;notlongerthan1mm 1ea,notlongerthan5mm,notdeeperthanEdgeDefects：0.5mmAscutandcleaned.NostainsvisiblewithnakedWaferSurface：eyeSawmark： 20 mTTV： 40 mBow： 50 mWarp： 50 mAnglebetweensquaresides：90o 0.3o